The Improvement of Optical and ElectricalPerformance for High Brightness GaN-basedLight Emitting Diodes
博士 === 國立成功大學 === 光電科學與工程學系 === 101 === The different epitaxial structures of the high-brightness gallium nitride (GaN) based light-emitting diodes (LEDs) are demonstrated in this dissertation. In addition to enhancing the brightness of the devices in the lighting applications, LEDs face the poor ph...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91351114508917257240 |