Enhancement Mode High Electron Mobility Transistors with p-GaN Cap Layer
碩士 === 國立成功大學 === 光電科學與工程學系 === 101 === In this thesis, the normally-off GaN/AlGaN high electron mobility transistor (HEMT) on Si substrates by using the p-GaN cap layer is presented. The role of p-GaN to modulate the barrier height is discussed. The key idea is to make of use the polarization-induc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03799207843501077825 |