Electrical Characterization of HfO2-based Resistive Switching Memory at Nanoscale
碩士 === 國立暨南國際大學 === 電機工程學系 === 101 === Recently, resistive random access memory (RRAM) has drawn more and more attention from researchers. The advantages of RRAM include simple structure, high speed, low voltage operation, low cost, and low energy consumption. The RRAM has been considered as one of...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27048149520329650400 |