The investigation on the growth of SiC thin film by Thermal Chemical Vapor Deposition
碩士 === 國立交通大學 === 光電系統研究所 === 101 === Recently, SiC material is regarded as one of the most promising materials for high temperature, high power, radiation-resistant electronics applications due to its wide bandgap (>2.3eV) and high breakdown electric field (>3MV/cm) and high thermal condu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9tzzap |