A Study on the Effect of Ionizing Radiation on MOS Devices with Various Hf-based Dielectric Thickness
碩士 === 國立交通大學 === 加速器光源科技與應用碩士學位學程 === 101 === Extreme ultraviolet lithography (EUVL) is a promising technology and is most likely to be the next generation lithography technology in the future. Subsequently, the radiation damage during exposing process is inevitable and should be considered careful...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69144370651093290009 |