A Study on the Effect of Ionizing Radiation on MOS Devices with Various Hf-based Dielectric Thickness

碩士 === 國立交通大學 === 加速器光源科技與應用碩士學位學程 === 101 === Extreme ultraviolet lithography (EUVL) is a promising technology and is most likely to be the next generation lithography technology in the future. Subsequently, the radiation damage during exposing process is inevitable and should be considered careful...

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Bibliographic Details
Main Authors: Sung, Ming-Hung, 孫銘鴻
Other Authors: Tsui, Bing-Yue
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/69144370651093290009

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