Improvement on electrical characteristics of HfO2 MIS transistor with dual plasma treatment: CF4 pre-treatment and NH3 post-treatment
碩士 === 國立交通大學 === 電機學院電子與光電學程 === 101 === Silicon dioxide has been applied popularly in the integrated circuit process technology in the past 40 years. However the continuing scaling down of device has significantly reduced the thickness of gate dielectric film. The aggressive scaling of MOS devices...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44722977439465554247 |