The Construction of Up-Conversion Luminescence System and Temperature-dependent PL Study of InN Nanorod Arrays with Critical Size
碩士 === 國立交通大學 === 光電工程研究所 === 101 === Photoluminescence (PL) can characterize the emission property of various semiconductors, which is in turn used to understand the purity, crystalline quality, disorders, etc. of semiconductors such as InGaAs and InP. In this work, we have intensively studied the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87333342953197729618 |