Development of Ohmic Contacts with Low Surface Roughness and Low Contact Resistance on AlGaN/GaN HEMTs
碩士 === 國立交通大學 === 材料科學與工程學系 === 101 === The characteristics of Ohmic contacts on GaN high electron mobility transistors (HEMTs) have profound influence to the DC and RF performance. The most critical issue for Ohmic contacts on GaN HEMTs is the roughness of the surface morphology caused by inter...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08365759460063234980 |