Pulsed laser deposition of periodically-aligned Ga2Te3/Te nanocomposites with high electrical conductivity for thermoelectric applications
碩士 === 國立交通大學 === 材料科學與工程學系 === 101 === Gallium telluride (Ga2Te3), one of the typical A2IIIB3VI semiconductors, has a crystal structure of zinc blende (ZnS). To keep the stoichiometry of the Ga3+ and Te2- in the zinc blende structure, a large number of periodically assembled two-dimensional vacancy...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60398679966694121240 |