High-Performance In0.5Ga0.5As-based MOSCAP on GaAs Substrate Using MOCVD: From Material Growth to Device Application
博士 === 國立交通大學 === 材料科學與工程學系 === 101 === Future CMOS technology will aim at the integration of InGaAs semiconductor on silicon substrates for low-cost, light-weight, large area and high-performance logic devices. The first step toward the goal of InGaAs/Si is to obtain high-quality thin GaAs (or Ge)...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84280428105769714889 |