The Study of Gold-free Metallization for AlGaN/GaN High Electron Mobility Transistors
碩士 === 國立交通大學 === 照明與能源光電研究所 === 101 === GaN has drawn much attention for high power and high frequency applications. Au is usually used as Ohmic and gate metal in conventional GaN HEMT. However, as the price of Au getting higher and higher, the processing costs of GaN HEMTs were increased massively...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/md4vqk |