Micro-Patterned Low Temperature Ge on Si substrate for High Quality GaAs Growth
碩士 === 國立交通大學 === 照明與能源光電研究所 === 101 === Moore’s law predicts when the device is scaling down below 100 nm, the performance of Si device reaches its limitation. In the same time, the outstanding features of III-V materials higher electron mobility will play a major role along with Si in future...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/77221754298868157845 |