Investigation of the Depinning Schottky Junction and n+/p Junction on Ge-Channel MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 101 === In this thesis, firstly, metal/insulator/Ge (MIS) junctions were fabricated and analyzed electrically. We successfully release the FLP both on n and p type Ge by inserting the interfacial layer of GeO2 and Al2O3, and make the high SHB for hole in p-Ge case. Th...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51538756690274134960 |