A Study on the Contact Resistance Reduction in Metal/n-type Germanium Contacts
碩士 === 國立交通大學 === 電子研究所 === 101 === With the rapid progress of nano-fabrication technology, Si based MOSFETs have been successfully scaled down to 20 nm regime. However, the continued scaling will be a problem due to several physical and technical limitations, and the device performance may not be...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/58001522062615986997 |