Investigation and Modeling of Threshold-Voltage Modulation through Substrate Bias for Tri-gate MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 101 === This thesis investigates the feasibility of threshold voltage (Vth) modulation through substrate bias for tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are exam...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/09980455594138672222 |