Investigation and Modeling of Threshold-Voltage Modulation through Substrate Bias for Tri-gate MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 101 === This thesis investigates the feasibility of threshold voltage (Vth) modulation through substrate bias for tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are exam...
Main Author: | 江俊賢 |
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Other Authors: | 蘇彬 |
Format: | Others |
Language: | en_US |
Published: |
2012
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Online Access: | http://ndltd.ncl.edu.tw/handle/09980455594138672222 |
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