The Random Trap Induced Fluctuations of Bulk Tri-gate Devices by a New Trap Profiling Technique
碩士 === 國立交通大學 === 電子研究所 === 101 === As device channel length continues to scale beyond 100nm, we need to overcome many problems such as short channel effect, performance enhancement, and leakage current. So far, the major challenges have been overcome by difference technologies. For example, th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51686493784587434320 |