Fabrication and Characterization of N-Type Junctionless Independent Double-Gated Nanowire Transistors
碩士 === 國立交通大學 === 電子研究所 === 101 === In this thesis, we have successfully fabricated n-type juntionless (J-less) independent double-gated (IDG) poly-Si nanowire (NW) transistors which have highly doped channels but can be effectively turned off on account of the ultra-thin feature size of NWs. In add...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/23755186174487802361 |