Characterization and Modeling of Wide-Drain LDMOS Transistors for RF Applications
碩士 === 國立交通大學 === 電子研究所 === 101 === In recent years, with the rapid development of wireless communication markets, the importance of high power RF transistors has been increased. Because the Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) transistors have better RF performances and are easy to...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55585074599241033611 |