Experimental Evidence for MOSFET S/D Long-Range Coulomb Effects
碩士 === 國立交通大學 === 電子研究所 === 101 === Electron mobility degradation is currently encountered in highly scaled devices. This means that additional scattering mechanisms exist and will become profoundly important in next generation of devices. The aim of this work is to, for first time, present experime...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/61136296511744366015 |