Single photon avalanche diode with low dark count rate in standard CMOS technology

碩士 === 國立交通大學 === 電子研究所 === 101 === In this thesis, we propose and demonstrate a device structure of low dark-count-rate (DCR) single photon detector. To avoid the breakdown events triggered by the trap of shallow trench isolation (STI) in the active region, we design a guard-ring structure to keep...

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Bibliographic Details
Main Authors: Hsu, Fang-Ze, 許方則
Other Authors: Lin, Sheng-Di
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/34124984127248225111