Effects of InAs Quantum dots on Schottky Diodes and Field Effect Transistors
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === This thesis present the study on how charge capturing/escaping of quantum dot (QD) layers affects measured the electrical characteristics of Schottky diodes and field effect transistors (FETs). For the Schottky diodes with QDs, the current-voltage (I-V) cur...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00569942333525955656 |