Electrical characteristics and analyses of HfOx based resistive random access memories
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === In this thesis, we explore the electrical characteristics of HfOx based-RRAM cells. First, we fabricated Ni/HfOx/TiN and TiN/Ti/HfOx/TiN RRAM cells with various HfOx thickness and investigated the electrical characteristics with various compliance curre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12206971561310188217 |