A Study of Novel Stress Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering
博士 === 國立交通大學 === 電子物理系所 === 101 === To extend carrier mobility improvement by strain engineering in high density and small gate space CMOS circuits, we have proposed a new stress memorization technique (SMT) that uses strain proximity free technique (SPFT) to demonstrate mobility improvement throug...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06796667902983258032 |