Growth and characterization of middle-indium composition InGaN epilayers by two-heater MOCVD reactor
碩士 === 國立交通大學 === 電子物理系所 === 101 === In this theis, three series of InxGa1－xN films were grown by two-heater metalorganic chemical vapor deposition (two-heater MOCVD) system. They are varying growth temperature series, varying graphite disk rotation series, and varying trimethylgallium (TMGa) flow r...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44061437846477087682 |