Effects of NH3 Plasma Treatment on Bottom Gate Poly-Silicon Thin-Film Transistors
碩士 === 國立交通大學 === 電子物理系所 === 101 === First, the passivation effect of NH3 plasma treatment on bottom gate poly-Si TFTs is thoroughly discussed. The poly-Si TFTs are exposed to NH3 plasma with several conditions, including diverse stages, various plasma treatment time, and different plasma power. Com...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81512685951184706125 |