Gate driver designs for AlGaN/GaN HEMT power transistors

碩士 === 國立交通大學 === 機械工程系所 === 101 === This thesis proposed a proper and complete high/low side gate drive circuit for GaN transistors. Unlike the conventional enhancement mode driver, this circuit designed for the depletion mode transistors, providing a negative gate-source voltage to turn off the po...

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Bibliographic Details
Main Authors: Wu, Cheng-Kuan, 吳政寬
Other Authors: Chen, Tsung-Lin
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/05310759783398313940