Development of Highly Conductive Hydrogenated Microcrystalline Silicon Oxide Doped Layers for Thin-Film Solar Cell Applications

• Main Authors: Chen, Yu-An, 陳璵安
• Other Authors: Tsai, Chuang-Chuang
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/95443703504810324156

碩士 === 國立交通大學 === 光電工程學系 === 101 === In this study, plasma-enhanced chemical vapor deposition (PECVD) was used to deposit hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for thin-film solar cell applications. In hydrogenated amorphous silicon (a-Si:H) single-junction thin film solar cells, the thickness of the absorber layer should be thin to reduce Staebler-Wronski effect. The light trapping is necessary to achieve longer light paths to reduce the limit of the light absorption due to thinner absorber. The μc-SiOx:H with wider bandgap, lower coefficient and higher conductivity was a suitable doped layer. However, the incorporation of oxygen decreased the crystallinity as well as the conductivity. In this study, by optimizing the deposition conditions, the μc-SiOx:H film with the higher bandgap, higher conductivity and lower refractive index than that of a-Si:H was obtained. The characteristics of μc-SiOx:H n-layer was found to be similar to transparent conductive oxide (TCO). Thus, we replaced the a-Si:H(n)/TCO back reflector by a-Si:H(n)/μc-SiOx:H(n)/TCO in a-Si:H single-junction solar cell. The highest efficiency of the a-Si:H single-junction solar cell was 9.63 % with Voc = 890.1 mV, Jsc = 14.73 mA/cm2 and F.F. = 73.51%. Besides, µc-SiOx:H(n)/µc-SiOy:H(n)/Ag structure was used to replace a-Si:H(n)/TCO/Ag as back reflector (BR) structure and the best conversion efficiency in this study was 9.60%.