A Study on the improvement of Gate Dielectric Reliability for Trench Power MOS
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 101 === Power MOSFET has been widely used in the carrying high-current, high-voltage discrete components. While the planar power MOSFET was first adopted as the choice of design, trench power MOSFET becomes the mainstream due to device scaling and the need for r...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64324525856008001885 |