Improved the uniformity of Gate Oxide Thickness of High Voltage Devices
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 101 === The purpose of this study is to improve the uniformity of gate oxide thickness in 0.15μm high voltage device. Thermal oxidation process was used to fabricate this gate oxide. During oxidation process, gate oxide needs overcome the thermal stress distribu...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/41002387735940640452 |