The Growth of InAlN/AlN/GaN Heterostructures by MOCVD for High Electron Mobility Transistor Applications
碩士 === 國立交通大學 === 影像與生醫光電研究所 === 101 === Due to the characteristics of wide bandgap, high breakdown field, high electron mobility and excellent thermal conductivity, GaN electronic devices have become one of the most promising candidates for next generation high-power applications. Among the GaN bas...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01386175034002581537 |