N- and P- channel Sb-based Heterojunction Field-Effect Transistors: Material Growth and Device Characteristics
博士 === 國立中央大學 === 電機工程學系 === 101 === The development of high electron mobility transistors (HEMTs) started in 1978. Modulation-doped AlGaAs/GaAs heterostructures were immediately demonstrated and revealed the formation of two-dimentional electron gas (2DEG) with enhanced electron mobility. As epitax...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55987994673006996410 |