Depletion Characteristics Investigation of 2D Junctionless Double-Gate MOSFETs
碩士 === 國立中央大學 === 電機工程學系 === 101 === In this thesis, at first we introduce the advantages of junctionless double-gate MOSFET. We establish two-dimensional device model for numerical simulation, and use the energy band diagram to study the device. When the applied gate voltage increases for an n-cha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52464048985370870912 |