An Improved 2D Rectangular Mesh for Gate-All-Around MOSFET Analysis
碩士 === 國立中央大學 === 電機工程學系 === 101 === This thesis explores and develops an improved rectangular mesh and applies it to the 2D simulation of surrounding gate MOSFET. We use Poisson’s equation, electron continuity equation and hole continuity equation to construct a rectangular mesh for 2D numerical s...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64840645849464436660 |