Fabrication and Characterization of Submicron InGaAsSb Base Heterojunction Bipolar Transistors
博士 === 國立中央大學 === 電機工程學系 === 101 === In order to achieve THz InGaAsSb base heterojunction bipolar transistors we have focused our efforts on three research areas over the past few years, including the growth of high quality InGaAsSb, the design of the device layer structure, and the development of p...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/6p5t7m |