Characteristics of Gallium Nitride Island Structures Grown on (111)Si by Metal Organic Chemical Vapor Deposition
碩士 === 國立中央大學 === 電機工程學系 === 101 === In recent years, growing GaN on (111) silicon substrates has been regarded as a competitive technique to achieve low-cost optical and power GaN devices. One of the key issues is the 17% lattice constant mismatch between GaN and silicon substrate, resulting a disl...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/17776590013914191039 |