“Designer” Ge Quantum Dots on Si：A Novel Heterostructure Configuration with Enhanced Near Infrared Photodetectors and Phototransistors
碩士 === 國立中央大學 === 電機工程學系 === 101 === In this thesis, we have successfully demonstrated Ge quantum dots (QDs) of desired size, location and depth of penetration into the Si substrate using the control available through nano-patterning and selective oxidation of SiGe pillars over a buffer layer of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/z7e478 |