Formation of self-organized Ge quantum dots/SiO2/silicon heterostructures with interface engineering
碩士 === 國立中央大學 === 電機工程學系 === 101 === In this thesis, we demonstrated a novel method for the fabrication of a designer Ge quantum dot (QD)/SiO2/Si heterostructure by selectively oxidizing poly-Si0.83Ge0.17 nano-pillars over buffer layers of Si3N4 that were deposited over Si substrates. The formation...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18936510872986435531 |