The Study on Sol-gel Process Indium Gallium Zinc Oxide for Semiconductor Devices Application

碩士 === 國立彰化師範大學 === 光電科技研究所 === 101 === Abstract In this study, we prepared amorphous IGZO thin film by sol-gel process. The effects of Ga ratio and different annealing temperstures on physical, resistivity and optical properties for thin films were discussed. We found that the higher the proportion...

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Bibliographic Details
Main Authors: Lai Ming San, 賴名山
Other Authors: Wang Yu Wu
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/32385437004174158862

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