Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors
碩士 === 國立中山大學 === 光電工程學系研究所 === 101 === It is found that the metal-oxide semiconductor such as indium-gallium-zinc-oxide thin film transistor under the high current, high bias, and light illumination operation can cause electrical characteristic degradation. Especially, self-heating and hot-carrier...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03898664940098275039 |