The resistive switching mechanisms of the SiO2 based resistance random access memory
博士 === 國立中山大學 === 光電工程學系研究所 === 101 === Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption, high-speed operation and good reliability for next-generation NVM application. However, all of the charges stored in the floating gate will leak into the substr...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/68847561256742612273 |