Physical Mechanism of Reliability Analysis on SOI and High-k/Metal Gate MOSFETs
博士 === 國立中山大學 === 物理學系研究所 === 101 === This dissertation studies physical mechanisms and reliability analysis on Silicon-on-Insulator (SOI) and high-K/metal gate MOSFETs. For the part of bias temperature instability (BTI), we investigate negative bias temperature instability (NBTI) degradation in par...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/79030130446552044636 |