First-principles studies of atomic structures and electronic properties of Bi ultrathin films on Si(111) and Ge(111)
碩士 === 國立中山大學 === 物理學系研究所 === 101 === The atomic and electronic structures of ultrathin bismuth films on Si(111) and Ge(111) surface were investigated using first-principles calculations at Bi coverages ranging from 1/3 ML to 5 MLs. The free standing bismuth bilayer is in buckled honeycomb structure...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/35537193320389840201 |