Study of Physical Mechanisms of Electrical Reliability and Environmental Sensitivity for Advanced InGaZnO Thin Film Transistors
博士 === 國立中山大學 === 物理學系研究所 === 101 === In the first part, we investigate the instability of negative bias temperature in the dark and the illumination stresses for the amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (a-IGZO TFTs). During the negative bias temperature illumination s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35321676144504324770 |