Fabrication Improvements and Analyses of m-GaN Light Emitting Diodes
碩士 === 國立中山大學 === 物理學系研究所 === 101 === M-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) have been achieved. Ⅴ/Ⅲ ratio and growth temperature are the most important factors in the growth sequence. The surface of m-plane GaN was treated by (NH4)2S and annealing for...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/21584104910934761803 |