Fabrication Improvements and Analyses of m-GaN Light Emitting Diodes
碩士 === 國立中山大學 === 物理學系研究所 === 101 === M-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) have been achieved. Ⅴ/Ⅲ ratio and growth temperature are the most important factors in the growth sequence. The surface of m-plane GaN was treated by (NH4)2S and annealing for...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21584104910934761803 |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 101 === M-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) have been achieved. Ⅴ/Ⅲ ratio and growth temperature are the most important factors in the growth sequence.
The surface of m-plane GaN was treated by (NH4)2S and annealing for ohmic contact condition. The specific contact resistance of m-plane p-GaN was calculated by TLM model. Furthermore, the anisotropic characteristic of p-GaN mobility was obtained by hall bar measurement.
M-plane GaN based light-emitting diode was also fabricated through the photolithography process. The surface treatment effects was also discussed.
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