| Summary: | 碩士 === 國立中山大學 === 機械與機電工程學系研究所 === 101 === The Composite electro-plating in-process sharpening (CEPIS) method
is employed to sharpen the grinder during the grinding process. However,
the coating thickness using CEPIS method is always increasing. To
overcome this disadvantage, the pluse reverse current with off time is
applied to this method to grind the SiC and the diamond film, and it is
called the Composite electro-plating and electrolyzing in-process
sharpening (CEPELIS) method.
Experiment results show that, when the reverse-pluse time increases,
the growth rate of the coating film in the grinder becomes slower and
looser and the roughness of the diamond fi lm is decreased slowly at the
current density of 4.5 ASD. A two-stage CEPELIS method at reverse-pluse
time of 1500 μs is used to grind the CVD diamond film. In this first stage, a
grit size of 10 μm is used to conduct CEPELIS grinding for 120 min, and
then the grit size of 3 μm for 120 min. Finally, a mirror-like surface on the
diamond film with an surface roughness of 0.05 μm is obtained, and the
growth rate of the coating film is slightly increased. On the other hand, the
coating thickness can be maintained constant in grinding SiC process at
highter operating range. In addition, a mirror-like surface of SiC with an
average surface roughness of 0.06 μm can be obtained.
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