Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory
碩士 === 國立中山大學 === 機械與機電工程學系研究所 === 101 === In this thesis, silicon dioxide (SiO2) doped hafnium oxide (HfO2) is applied to form low-k doped high-k materials, and the multilayer structure is used to enhance the resistive random access memory (RRAM) properties. Hafnium oxide RRAM device has very fast...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/71132619632814760557 |