| Summary: | 碩士 === 國立清華大學 === 光電工程研究所 === 101 === In recent years, since silicon nanostructures have many unique qualities, they have been applied to a wide variety of areas, including optoelectronic devices, biological, semiconductor optical devices, optical-sensing devices and solar cells. In this thesis, metal-assisted chemical etching of silicon incorporating localized surface plasma resonance was studied. The basic idea is that the etching rate is influenced by the light illuminating on the metal nanoparticles. Several case studies were carried out to examine the etching rate, including different content of the chemical etching solution, the vapor chemical etching method, and light sources with different wavelength bands. SEM images are taken to characterize the silicon nanopores, etching rate and so on. Via the experimental results, we concluded the localized surface plasmon (LSP) on the metal nanoparticles will affect the etching rate very much. These strong LSP modes increase the light absorption of Si, resulting in a large amount of holes injected in the silicon. It can explain why the etching speed was greatly enhanced and was wavelength dependent.
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